Crystal growth in glasses and amorphous semiconductors
US4464557A · kind A · utility
3Cited by
2References
11Claims
0Family size
Inventors
Key dates
| Filing date | Nov 23, 1981 |
| Grant date | Aug 7, 1984 |
| Priority date | — |
| Expiry date | Nov 23, 2001 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC22F3/00
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Crystal growth is effected by laser energy input and direct heating at a glass-crystal interface. The process is based on the use of a laser beam of appropriate wavelength as a means of providing heat to the interface due to transmittance differences between the glass and crystal phases. The process is useful for inducing crystal growth in amorphous semiconductors and oriented crystal growth in ceramic, metallic, and polymeric glasses, and for producing shaped single crystals from preformed glassy shapes. The transmittance differences can be used to provide direct heat and thus drive any two-phase boundary on a microscopic scale.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.