Method for forming photovoltaic cells employing multinary semiconductor films
US4465575A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 1983 |
| Grant date | Aug 14, 1984 |
| Priority date | — |
| Expiry date | Feb 28, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
At least two constituent elements of a semiconductor compound are deposited in varying proportions by magnetron sputtering to produce a film having a preselected concentration gradient of the constituent elements. The film can be heat treated during or after deposition to diffuse the constituent elements within the film and enhance growth of a desired film structure. The sputtering step may be performed using a planar magnetron having a plurality of continuous magnetically enhanced sputtering cathodes extending about a common axis. Each of the cathodes includes a source structure containing at least one of the constituent elements, and provision for applying electrical power to the source structure to sputter the constituent element at a controlled rate. If one of the elements is difficult to control in the deposition process, it can be sputtered from a cathode made up of a stable alloy of the element and another constituent of the film. For example, when the semiconductor compound is CuInSe.sub.2, two of the sputtering cathodes may comprise In.sub.2 Se.sub.3 and Cu.sub.2 Se, respectively, and a third optimal cathode comprises either Cu or In.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.