Bandgap control in amorphous semiconductors
US4465706A · kind A · utility
4Cited by
4References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 20, 1981 |
| Grant date | Aug 14, 1984 |
| Priority date | — |
| Expiry date | Nov 20, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Method of producing amorphous semiconductor hydrides (hydrogenated amorphous semiconductors) with specified bandgaps. The desired bandgap is achieved by controlling the temperature and partial pressure of higher order semiconductanes which are created pyrolytically, for example, on a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.