Photoconductive member with a -Si having two layer regions

US4465750A · kind A · utility

Assignee

• Canon Kabushiki Kaisha · JP

Inventors

• Kyosuke Ogawa · Mine, JP
• Shigeru Shirai · Yamato, JP
• Junichiro Kanbe · Yokohama, JP
• Keishi Saitoh · Tokyo, JP
• Yoichi Osato · Yokohama, JP

Key dates

• Filing date: Dec 13, 1982
• Grant date: Aug 14, 1984
• Expiry date: Dec 13, 2002

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F30/15

Abstract

A photoconductive member comprises a support and an amorphous layer compsed of a first layer region composed of a photoconductive amorphous silicon containing p- or n-type impurity distributed nonuniformly and continuously in the layer thickness direction, and a second layer region composed of Si.sub.a C.sub.1-a (0.4<a<1), [Si.sub.b C.sub.1-b ].sub.c H.sub.1-c (0.5<b<1, 0.6.ltoreq.c<1), [Si.sub.d C.sub.1-d ].sub.e X.sub.1-e (0.47<d<1, 0.8.ltoreq.e<1, X: halogen) or [Si.sub.f C.sub.1-f ].sub.g (H+X).sub.1-g (0.47<f<1, 0.8.ltoreq.g<1, X: halogen].