Nonvolatile semiconductor memory device and method of fabricating the same
US4467452A · kind A · utility
12Cited by
4References
5Claims
0Family size
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Key dates
| Filing date | Dec 15, 1981 |
| Grant date | Aug 21, 1984 |
| Priority date | — |
| Expiry date | Dec 15, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/69
Abstract
A nonvolatile semiconductor memory device having a gate insulating film with a memory function. An impurity layer having the same conductivity type as that of the substrate region is formed in that substrate region, underlying the gate insulating film having a memory function, in which a channel is formed. The impurity layer has an impurity profile in which a peak of an impurity concentration is in the region distanced by 500 .ANG. or less from the surface of the substrate region and the impurity concentration is 1.times.10.sup.18 cm.sup.-3 or less in the region at the depth of 500 .ANG. or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.