Method for making thin-film transistors
US4469568A · kind A · utility
42Cited by
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1Claims
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Key dates
| Filing date | Dec 1, 1982 |
| Grant date | Sep 4, 1984 |
| Priority date | — |
| Expiry date | Dec 1, 2002 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/118
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for making a thin-film transistor wherein a gate insulating layer is formed by anodizing two oxide layers on the substrate and then etching the assembly to completely remove the uppermost one of these layers to leave the lowermost layer so as to serve as the gate insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.