Thin film capacitor with a dual bottom electrode structure
US4471405A · kind A · utility
44Cited by
7References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 3, 1983 |
| Grant date | Sep 11, 1984 |
| Priority date | — |
| Expiry date | Oct 3, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01G4/08
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A thin film capacitor having a dual bottom electrode is provided. The bottom electrode includes a first layer of metal and a second layer of platinum, the metal of the first layer having the characteristic of forming a stable intermetallic phase with platinum during heat treatment. The first layer metal may be selected from the group consisting of Hf, Zr and Ta. The thin film capacitor may be employed as a decoupling capacitor in VLSI devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.