Process using plasma for forming conductive through-holes through a dielectric layer
US4472238A · kind A · utility
15Cited by
7References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 5, 1983 |
| Grant date | Sep 18, 1984 |
| Priority date | — |
| Expiry date | Dec 5, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49167
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A conductive through-hole is formed by plasma etching a hole completely through a dielectric sandwiched between conductors and by deforming at least one conductor which has been undercut during the etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.