Bulk, polycrystalline switching materials for threshold and/or memory switching
US4472296A · kind A · utility
12Cited by
3References
5Claims
0Family size
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Key dates
| Filing date | Jun 21, 1982 |
| Grant date | Sep 18, 1984 |
| Priority date | — |
| Expiry date | Jun 21, 2002 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49179
Abstract
A new group of bulk polycrystalline materials which are capable of exhibiting, selectively, either memory switching or threshold switching. The body of the material, which can be molded into a suitable ceramic resistor configuration with ohmic electrodes and a sintered body composition, comprises as a majority proportion zinc oxide with the balance being another polycrystalline inorganic oxide such as bismuth oxide, cobalt oxide, chromium oxide, antimony oxide, praseodymium oxide, lanthanum oxide, holmium oxide and manganese oxide, or mixtures thereof.
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