Method of making a plurality of MOSFETs having different threshold voltages
US4472871A · kind A · utility
49Cited by
7References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 19, 1980 |
| Grant date | Sep 25, 1984 |
| Priority date | — |
| Expiry date | Nov 19, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0128
Abstract
An integrated circuit using MOSFETs having varying threshold voltages permitting improved performance and reduced area utilization on a monolithic semiconductor chip is produced by selectively varying ion implantation doses in the channels of the MOSFETs. By repeated masking and implanting steps, selected MOSFETs are implanted with differing doses of ions and combinations of doses, thereby forming circuit portions with MOSFETs having threshold voltages tailored to optimize different characteristics associated with different circuit portions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.