Process for producing dielectrically isolated single crystal silicon devices
US4473433A · kind A · utility
24Cited by
5References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 18, 1982 |
| Grant date | Sep 25, 1984 |
| Priority date | — |
| Expiry date | Jun 18, 2002 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/904
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Well-oriented device quality silicon is formed on a dielectric material through a specific melting procedure. In this procedure, a body including polycrystalline or amorphous silicon overlying a dielectric is heated to a temperature close to the melting point of silicon. A narrow region of the amorphous or polycrystalline silicon whose length is substantially longer than its width is then melted using an energy source such as a laser. This long, narrow region is propagated through the amorphous or polycrystalline silicon to produce the desired device quality material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.