Long wavelength avalanche photodetector

US4473835A · kind A · utility

Assignee

• AT&T Bell Laboratories · US

Inventors

• Stephen R. Forrest · Ann Arbor, US
• Ock-Ky Kim · Bound Brook, US
• Richard G. Smith · Orlando, US

Key dates

• Filing date: Jun 19, 1981
• Grant date: Sep 25, 1984
• Expiry date: Jun 19, 2001

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F30/2255

Abstract

An avalanche photodetector useful at wavelengths as long as 1.7 microns with low noise is achieved. The crystal used includes successive layers of p-type indium phosphide, n-type indium phosphide, and n-type indium gallium arsenide. An appropriate total of fixed charges in the n-type indium phosphide and a graded bandgap heterointerface region are important for the improved results.