Integrable large dynamic range photodetector element for linear and area integrated circuit imaging arrays
US4473836A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | May 3, 1982 |
| Grant date | Sep 25, 1984 |
| Priority date | — |
| Expiry date | May 3, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/18
Abstract
An integrable photodetector element of large dynamic range includes a silicon substrate which has a resistivity of between 1 and 100 ohm-cm. The substrate is of one conductivity type. In the substrate there is an electrically floating photosensitive diffusion region and a second diffusion region that is spaced apart from the electrically floating region by means of a channel in the substrate. The two diffusion regions are of the same conductivity type and of opposite conductivity type to that of the substrate. A metal-insulator-semiconductor gate spans the substrate between the regions and over the channel. The gate is electrically connected to the electrically floating region, and the second region is reverse biased with respect to the substrate. Except for the photosensitive diffusion region, the element is shielded against penetration by visible light. The length of the channel between the regions, the resistivity of the substrate, the magnitude of the reverse bias and the depth of the diffusion regions is selected so that the potential barrier between the electrically floating region and the channel is low enough that electrons which are photogenerated in response to visible li…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.