Method for making a GaN electroluminescent semiconductor device utilizing epitaxial deposition
US4473938A · kind A · utility
35Cited by
5References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 12, 1983 |
| Grant date | Oct 2, 1984 |
| Priority date | — |
| Expiry date | Apr 12, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/913
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electroluminescent semiconductor device comprising bodies of conductive and resistive crystalline gallium nitride (GaN) which are successively epitaxially deposited on a surface of a heat-treated sapphire substrate, and a body of insulative crystalline gallium nitride epitaxially deposited on the resistive body.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.