Method for superficial annealing of semiconductor materials using pulsed micro-wave energy
US4474625A · kind A · utility
16Cited by
7References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 24, 1982 |
| Grant date | Oct 2, 1984 |
| Priority date | — |
| Expiry date | Sep 24, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/324
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method for superficial annealing of a semi-conductor wherein a sample of the semi-conductor material is placed inside a cavity resonator, and a microwave pulse is generated inside said resonator, the said pulse being long and strong enough to cause the superficial annealing and/or fusion of the sample and its subsequent re-crystallization.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.