Exposure process and system
US4475223A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 1982 |
| Grant date | Oct 2, 1984 |
| Priority date | — |
| Expiry date | Jun 10, 2002 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F9/7034
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An X ray exposure process and system for transferring a mask pattern onto a wafer with use of X rays, wherein heights on the mask at many points are measured on a light interference band basis by a mask-height measuring device of non-contact measurement type at an X ray exposure position, the mask being mounted on a chamber which is filled with a He gas and or the like to prevent attenuation of an X ray source, heights on the wafer at many points are measured at a wafer-height measuring position different from said exposure position, and according to the measured results, the wafer is finely moved upwardly or downwardly (that is, deformed) individually independently by means of a chuck which sucks and holds the wafer at many points thereon so that, a gap between the mask and wafer is adjusted to a desired level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.