Method for production of magnetic bubble memory device
US4476152A · kind A · utility
8Cited by
0References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 9, 1983 |
| Grant date | Oct 9, 1984 |
| Priority date | — |
| Expiry date | Feb 9, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F41/186
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Hydrogen ion is implanted twice or more at different acceleration voltages into desired portions of a magnetic film holding magnetic bubbles to form a magnetic bubble propagation path. This ensures production of an ion-implanted device having a sufficiently large anisotropic magnetic field parallel to the magnetic film and a high Curie temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.