Photovoltaic device
US4476346A · kind A · utility
26Cited by
3References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 8, 1983 |
| Grant date | Oct 9, 1984 |
| Priority date | — |
| Expiry date | Feb 8, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
Abstract
A PIN junction photovoltaic device using a P-type or N-type semiconductor having an optical band gap of not less than about 1.8 eV and a dark conductivity of not less than about 10.sup.-8 (.OMEGA..multidot.cm).sup.-1 at 20.degree. C. in the layer positioned on the side opposite to incidence of light. The photovoltaic device has an improved efficiency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.