Method of making a gallium nitride light-emitting diode
US4476620A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 31, 1983 |
| Grant date | Oct 16, 1984 |
| Priority date | — |
| Expiry date | Mar 31, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/969
Abstract
The substrate of a gallium nitride light-emitting diode is made rough at given positions on the surface thereof, or an insulating film strip pattern is attached on the surface of the substrate prior to growing an n-type conductive gallium nitride layer and a semi-insulating gallium nitride layer thereon. As a result, high conductivity regions are formed in the semi-insulating layer at positions corresponding to the rough surfaces or the insulating film strip pattern in such a manner that each of the high conductivity region extends from the n-type conductive layer to the upper surface of the semi-insulating layer so as to function as a conductor to be connected to an electrode. In the same manner similar high conductive regions are made along kerf portions in a diode wafer, preventing each diode chip from being damaged on cutting.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.