Method of fabricating polycrystalline silicon strips
US4478880A · kind A · utility
13Cited by
10References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 27, 1983 |
| Grant date | Oct 23, 1984 |
| Priority date | — |
| Expiry date | Jun 27, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/915
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A fabrication method for use in making photocells consisting in depositing on the top face of a carbon ribbon (4) being moved horizontally in its lengthwise direction through an oven (9) a layer of silicon, said oven being imparted a vertical temperature gradient, and in burning away the portion of the ribbon supporting the silicon layer immediately following deposition of said layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.