Tungsten barrier contact
US4478881A · kind A · utility
24Cited by
3References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 28, 1981 |
| Grant date | Oct 23, 1984 |
| Priority date | — |
| Expiry date | Dec 28, 2001 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/907
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor contact has a thin barrier layer less than 500 angstroms in thickness of a metal such as tungsten applied between an aluminum contact layer and a metal-semiconductor compound. The metal semiconductor compound forms a junction with an underlying semiconductor substrate. The thin barrier prevents a chemical reaction between the aluminum of the contact layer and the metal of the metal-semiconductor compound.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.