Transformer core having charge dissipation facility
US4479104A · kind A · utility
7Cited by
8References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 6, 1982 |
| Grant date | Oct 23, 1984 |
| Priority date | — |
| Expiry date | Jan 6, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F27/343
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Transformer cores are made electrically conductive during impulse voltage condition when a certain voltage is attained by a coating of semiconductor material applied to the edges or surface of the core laminations. Under ordinary operating conditions the semiconductor material provides a high resistance path to charges in the core. Upon the occurrence of a high voltage impulse, the semiconductor material rapidly equalizes the charges in the laminations and so avoids the danger of breakdown of the insulating coatings between individual laminations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.