Protection of semiconductor substrates during epitaxial growth processes
US4482423A · kind A · utility
11Cited by
1References
10Claims
0Family size
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Key dates
| Filing date | Jun 25, 1982 |
| Grant date | Nov 13, 1984 |
| Priority date | — |
| Expiry date | Jun 25, 2002 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/18
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Thermal degradation of compound single crystal substrates (e.g., InP) containing a relatively volatile element (e.g., P) prior to LPE growth has been virtually eliminated by an improved protection technique. A partial pressure of the volatile element is provided by a solution (e.g., Sn-In-P) localized inside a chamber which is external to the LPE boat and which surrounds substrate prior to growth, thereby preventing thermal damage to the substrate surface. Applicability of the technique to other epitaxial growth processes (e.g., VPE and MBE) is also discussed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.