Static induction transistor and semiconductor integrated circuit using hetero-junction
US4484207A · kind A · utility
23Cited by
5References
5Claims
0Family size
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Key dates
| Filing date | Jul 26, 1983 |
| Grant date | Nov 20, 1984 |
| Priority date | — |
| Expiry date | Jul 26, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/602
Abstract
A hetero-junction static induction transistor (SIT) of normal or upside-down type to be operated by applying a forward bias across the gate and source regions, in which at least its source region and gate region among the source, drain and gate regions is formed with a material having a band gap broader than that of the channel region. Such a SIT provides a large current amplification factor, improved frequency characteristics and is suitable for high power operation and for use in semiconductor integrated circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.