SOS Mosfet with thinned channel contact region
US4484209A · kind A · utility
9Cited by
2References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 20, 1981 |
| Grant date | Nov 20, 1984 |
| Priority date | — |
| Expiry date | Oct 20, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/03
Abstract
A MOS type semiconductor device formed on an insulating layer and having a substrate electrode. A first semiconductor layer for forming a MOS type element is formed on the insulating layer and has a substrate region where a channel is to be formed. To this substrate region is connected a second semiconductor layer which is thinner than the first semiconductor layer and which has the same conductivity type as that of the substrate region where the channel is to be formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.