Bandgap control in amorphous semiconductors
US4485128A · kind A · utility
70Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 7, 1982 |
| Grant date | Nov 27, 1984 |
| Priority date | — |
| Expiry date | Jan 7, 2002 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/909
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Method of producing amorphous semiconductor hydrides (hydrogenated amorphous semiconductors) with specified bandgaps. The desired bandgap is achieved by controlling the temperature and partial pressure of higher order semiconductanes which are created pyrolytically, for example, on a substrate using a hot-wall epitaxial reactor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.