Silicon carbide material for low-melting point fusion metal
US4485143A · kind A · utility
4Cited by
3References
8Claims
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Key dates
| Filing date | Jun 18, 1982 |
| Grant date | Nov 27, 1984 |
| Priority date | — |
| Expiry date | Jun 18, 2002 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/263
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A silicon carbide material for low-melting point fusion metal composed of recrystallization silicon carbide or silicon nitride coupled silicon carbide and containing free silicon and silicon oxide in a total amount of 5% by weight or below. More preferably, the silicon carbide material is formed on the surface with a film of vapor phase growth silicon carbide or silicon nitride, and on this film or in place of this film silicon nitride and/or boron nitride is coated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.