Method and apparatus for gas phase treating substrates
US4486461A · kind A · utility
13Cited by
3References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 16, 1983 |
| Grant date | Dec 4, 1984 |
| Priority date | — |
| Expiry date | Mar 16, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Despite the short lifetime of excited plasma gas, a very large number of wafers can be uniformly gas phase treated in the plasma state by using a single high frequency power supply coil or capacitor, not only for exciting reaction gas passing near the wafers in a reaction tube but also for heating radiators, surrounding the substrates, which heat the wafers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.