Combination film, in particular for thin film electroluminescent structures
US4486487A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 25, 1983 |
| Grant date | Dec 4, 1984 |
| Priority date | — |
| Expiry date | Apr 25, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24975
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Described herein is a combination film based on aluminium oxide (Al.sub.2 O.sub.3) and titanium oxide (TiO.sub.2), to be used in particular in the thin film electroluminescent structures. Aluminum oxide is an amorphous insulator having a low refraction index, whereas titanium oxide is a chrystalline conductor having a high refraction index. The combination film according to the invention comprises a plurality of alternating aluminium oxide and titanium oxide layers having a thickness of 3 to 1000 .ANG.. preferably 5 to 250 .ANG.. Such a combination film has favorable dielectric strength and refraction index properties and is particularly adapted for use in electroluminescence structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.