Dense nonvolatile electrically-alterable memory device with substrate coupling electrode
US4486769A · kind A · utility
46Cited by
5References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 2, 1981 |
| Grant date | Dec 4, 1984 |
| Priority date | — |
| Expiry date | Feb 2, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A compact, floating gate, nonvolatile, electrically-alterable memory device fabricated with three layers of polysilicon and a substrate coupling electrode is described. A particular form of the device utilizes asperities to promote tunnel current flow through relatively thick oxides by means of relatively low average applied voltages. The use of four electrode layers leads to an extremely dense cell and memory array configuration. The substrate electrode is used to establish bias voltages in the cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.