Method and device for determining the physical characteristics of a semiconductor material
US4487661A · kind A · utility
3Cited by
5References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 8, 1983 |
| Grant date | Dec 11, 1984 |
| Priority date | — |
| Expiry date | Sep 8, 2003 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2831
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
In a method for determining the physical characteristics of a silicon wafer, one side of the wafer (4) is removably fixed to the base (2) of a container (1) so as to close off a hole (3) therein. An electrical connection to this side of the wafer (4) is made thru the hole (3). The wafer (4) forms the working electrolyte of a cell comprising an electrolyte contained in the container (1). An auxiliary electrode (14) is removably placed in the electrolyte. The method and the device implementing it can be used to determine the crystallographic and electrical characteristics of a sample of silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.