Three-mirror active-passive semiconductor laser
US4488307A · kind A · utility
10Cited by
4References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 7, 1982 |
| Grant date | Dec 11, 1984 |
| Priority date | — |
| Expiry date | Jun 7, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2004
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed is a GaA1As laser diode wherein an abrupt etch step in the waveguide layer forms a third mirror. The structure is a large optical cavity double heterostructure laser having a relatively long active cavity and a relatively short passive cavity. Output is temperature and current sensitive for single mode operation, widely-spaced dual mode operation, and narrow-band multimode operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.