Radiation-stimulated deposition of aluminum
US4489102A · kind A · utility
12Cited by
8References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 4, 1983 |
| Grant date | Dec 18, 1984 |
| Priority date | — |
| Expiry date | Apr 4, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/443
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for depositing aluminum films on a substrate comprises exposing the substrate to vapors of an aluminum hydride-trialkylamine complex and exposing the surface to ultraviolet light in the areas where aluminum deposition is desired.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.