SOS MOSFET With self-aligned channel contact
US4489339A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 14, 1983 |
| Grant date | Dec 18, 1984 |
| Priority date | — |
| Expiry date | Nov 14, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/00
Abstract
A MOS type semiconductor device effectively supplying potential to a substrate region under the channel forming region of the MOS transistor on an insulating substrate. The potential is supplied to the one conductivity type substrate region under the channel forming region which is provided on an insulating substrate and has an extended portion extending in the channel length direction, through a substrate potential take-out region of one conductivity type connecting to the extended substrate. A gate electrode with an extended gate portion is formed on the substrate region through a gate insulating film, so as to cover the substrate region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.