PNPN Light sensitive semiconductor switch with phototransistor connected across inner base regions
US4489340A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Jan 28, 1981 |
| Grant date | Dec 18, 1984 |
| Priority date | — |
| Expiry date | Jan 28, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/103
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
A PNPN semiconductor switch including an N type semiconductor substrate, spaced apart first and second P type diffused regions formed on a surface of an N type substrate, spaced apart first and second N type diffused regions formed in the second P type diffused region, a first gate insulating layer formed on the surface of the second P type diffused region between the first and second N type diffused regions to cover portions thereof, a first gate electrode formed on the first gate insulating layer between the first and second N type diffused regions, a resistance region disposed on the first gate insulating layer, one end of the resistance region on the side opposite to the first gate electrode, a second gate insulating layer overlying the first gate electrode and the resistance region, a semiinsulating layer formed on the surface of the substrate except over the first and second P type diffused regions, an insulating layer overlying the semiinsulating layer, a P gate electrode electrically connected to the second P type diffused region and the second N type diffused region, a second gate electrode formed on the second gate insulating layer at a portion above the first gate electr…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.