Stable suspensions of boron, phosphorus, antimony and arsenic dopants
US4490192A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 8, 1983 |
| Grant date | Dec 25, 1984 |
| Priority date | — |
| Expiry date | Jun 8, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S252/951
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor doping compositions comprising a suspension of (a) a dopant material, in the form of finely divided spherical particles of narrow size distribution from about 0.1 D to D, where D is the diameter of the largest particle and is no more than about (1.mu.) comprising a member selected from the group consisting of B.sub.x Si.sub.y, B.sub.x N.sub.y, P.sub.x Si.sub.y, P.sub.x N.sub.y, As.sub.x Si.sub.y and Sb.sub.x Si.sub.y wherein x and y vary from about 0.001 to about 99.999 mole percent, (b) an effective amount of a thermally degradable polymeric organic binder such as polymethyl methacrylate; and (c) an amount of an organic solvent, such a cyclohexanone, sufficient to dissolve said polymeric organic binder, such as polymethylmethacrylate, and to disperse said dopant material are disclosed. Three diffusion processes using the semiconductor doping compositions of the present invention for preparation of semiconductor materials having a wide range of sheet resistances and junction depths are also disclosed. The dopant materials selected for the semiconductor compositions of the present invention are less sensitive to moisture and chemical degradation and thereby afford grea…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.