InP:Fe Photoconducting device
US4490709A · kind A · utility
11Cited by
8References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 6, 1982 |
| Grant date | Dec 25, 1984 |
| Priority date | — |
| Expiry date | Dec 6, 2002 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
Abstract
A photoconducting device fabricated from Fe-doped, semi-insulating InP crystals exhibits an exponential decay transient with decay time inversely related to Fe concentration. Photoconductive gain as high as 5 is demonstrated in photoconducting devices with AuGe and AuSn contacts. Response times from 150 to 1000 picoseconds can be achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.