TiW.sub.2 N Fusible links in semiconductor integrated circuits
US4491860A · kind A · utility
49Cited by
2References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 23, 1982 |
| Grant date | Jan 1, 1985 |
| Priority date | — |
| Expiry date | Apr 23, 2002 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/915
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A film of titanitum-tungsten nitride is used to provide the dual function of a fuse link between a semiconductive device and an interconnect line in a memory array and of a barrier metal between another metal and a semiconductor region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.