RF Excited waveguide gas laser
US4493087A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 27, 1982 |
| Grant date | Jan 8, 1985 |
| Priority date | — |
| Expiry date | May 27, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S3/0315
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A waveguide gas laser of improved stability and efficiency resulting from novel improvements. Such improvements, including longitudinal RF excitation, unique ballasting techniques, a novel drive circuit design that is immediately responsive to defeat unstable hot spot problems, and a controlled power excitation function, result in an RF excited waveguide gas laser that substantially overcomes disadvantages of prior art devices. In one embodiment the invention consists of a longitudinally excited RF waveguide laser in which the spacing geometry of the electrodes is variable independently of the waveguide chamber geometry resulting in increased performance efficiency. In addition, hot spot problems are eliminated or substantially reduced by capacitive ballasting achieved through novel structural configurations including electrodes that are isolated from the waveguide chamber by means of a suitable dielectric spacing medium such as ceramic or aluminum oxide. In addition, a novel drive circuit of quarter-wave length and 75 Ohm characteristic impedance is utilized and the RF excitation power is applied over a controlled minimum time period of 1 millisecond. In another embodiment a uniqu…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.