Method for heating semiconductor wafers by a light-radiant heating furnace
US4493977A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 1983 |
| Grant date | Jan 15, 1985 |
| Priority date | — |
| Expiry date | Mar 29, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05B3/0047
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed herein is a method for operating a light-radiant heating furnace which includes a main heater capable of irradiating light onto an object to heat it up and a subsidiary heater adapted principally to additionally heat a peripheral portion of said object, which method includes actuating said main heater and subsidiary heater repeated in accordance with their respective actuation curves, which have in advance been prepared, in synchronization with intermittent transportation of objects into said light-radiant heating furnace. The light-radiant heating furnace permits a uniform heat treatment of objects always with high efficiency but without development of slip line or warping, even when they are semiconductor wafers and are heated up in short time periods.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.