Semiconductor device having an amorphous metal layer contact
US4494136A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 17, 1982 |
| Grant date | Jan 15, 1985 |
| Priority date | — |
| Expiry date | Sep 17, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28575
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metallization system for high temperature use comprises a layer strongly bonded to the surface of a semiconductor substrate in the form of an alloy of a metal in the amorphous state in which the metal is a transition metal, transition metal/normal metal alloy or transition metal/metalloid alloy having a crystallization temperature from the amorphous state in excess of 200.degree. C. The as-deposited amorphous films exhibit good adhesion and show at least an order of magnitude improvement in corrosion protection compared to polycrystalline coatings. Annealing treatments below the glass transition temperature have been found to further enhance this protective behavior of the amorphous films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.