Shortwave semiconductor laser
US4494237A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 1982 |
| Grant date | Jan 15, 1985 |
| Priority date | — |
| Expiry date | Jun 16, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/824
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A laser diode having an active layer which has a composition: EQU Ga.sub.x In.sub.1-x P with: 0.51.ltoreq.x.ltoreq.0.53 corresponding to a point of the straight line of the quaternary diagram GaInAsP which satisfies the condition of compatability of the crystal lattice parameter with that of a GaAs substrate. The confinement layers of the laser diode have a composition corresponding to a point of the straight line of the adjacent quaternary diagram GaAlInP which satisfies the condition of compatability of the crystal lattice parameter with that of the GaAs substrate, namely in respect of that point of said straight line which is located at the most favorable end of the line: EQU In.sub.z Al.sub.1-z P with: 0.45.ltoreq.z.ltoreq.0.49.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.