Process for producing dielectric layers for semiconductor devices
US4495219A · kind A · utility
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11Claims
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Key dates
| Filing date | Oct 8, 1982 |
| Grant date | Jan 22, 1985 |
| Priority date | — |
| Expiry date | Oct 8, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76283
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for producing a dielectric layer which on a semiconductor layer comprises the steps of forming a layer of oxide of an element selected from the group consisting of tantalum, titanium, niobium, hafnium, yttrium, zirconium, and vanadium on the surface of the semiconductor layer and heating the semiconductor layer having the oxide layer thereon in an oxidizing atmosphere. The semiconductor layer is thermally oxidized so as to form an insulating layer which comprises oxide of the semiconductor material at the interface between the semiconductor layer and the oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.