Capacitive pressure sensor
US4495820A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 1982 |
| Grant date | Jan 29, 1985 |
| Priority date | — |
| Expiry date | Sep 28, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01G5/16
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A capacitive pressure sensor and its manufacturing method are disclosed. An amplifier is formed on the main surface of a first semiconductor substrate by a diffusion process, and its surface is covered with an insulating film. An electrode is vapor-deposited on the surface of the amplifier and electrically connected to the amplifier through a through hole formed in the insulating film. For forming a diaphragm, the surface of a second semiconductor substrate disposed facing the electrode to form a capacitor, which is opposite to the surface of the second semiconductor substrate facing the electrode, is partially etched away to form a depression. The first and second semiconductor substrates are anodically bonded to each other using a glass layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.