Fine line patterning method for submicron devices
US4496419A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 6, 1983 |
| Grant date | Jan 29, 1985 |
| Priority date | — |
| Expiry date | Sep 6, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A technique for fine line patterning for submicron devices is disclosed. A fine line pattern is defined on a positive resist, which is then developed to expose corresponding portions of a mask layer. The pattern is then transferred to the mask layer to produce an oxidation mask which is used to control local surface oxidation of an underlying metal film, such as aluminum. The selectively oxidized aluminum film is then etched, leaving a patterned Al film corresponding to the initial positive pattern, since the etch rate of oxidized Al film is much less than the etch rate of the unoxidized Al film. The patterned film may be the final desired device structure, or may serve as a mask for pattern transfer to an underlying substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.