Method of manufacturing thin film circuits
US4496435A · kind A · utility
10Cited by
2References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 7, 1984 |
| Grant date | Jan 29, 1985 |
| Priority date | — |
| Expiry date | Feb 7, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/707
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film circuit including resistor elements and capacitor elements is prepared by forming a tantalum film for capacitor on an insulating substrate, forming a tantalum film for resistor over the substrate, covering a predetermined region of the tantalum resistor film with a titanium film, heat treating a resulting assembly, removing the titanium film, and then covering the predetermined region with a metal film to provide ohmic contact therebetween.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.