Method for fabricating devices with DC bias-controlled reactive ion etching
US4496448A · kind A · utility
31Cited by
12References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 13, 1983 |
| Grant date | Jan 29, 1985 |
| Priority date | — |
| Expiry date | Oct 13, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3345
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for fabricating a device is disclosed, which method involves a new reactive ion etching technique. Both a high etch rate and, for example, a high etch selectivity are simultaneously achieved with the inventive reactive ion etching technique by discharging an electrode of the reactive ion etching apparatus in response to a preselected criterion, e.g., a magnitude of a DC bias at said electrode which equals, or exceeds, a preselected value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.