Electron beam etching of integrated circuit structures
US4496449A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 1983 |
| Grant date | Jan 29, 1985 |
| Priority date | — |
| Expiry date | Dec 16, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2636
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A new apparatus for altering the microtopography of certain solid materials commonly used in the integrated circuit industry by electron beam induced etching is described. This is accomplished with one or more glow discharge electron beam guns operating in a controlled gas environment. Specially designed versions of these guns perform the dual functions of dissociating certain donors of reactive gases in close proximity to the substrate surface and enhancing surface reactions anisotropically with the directed electron beam energy. The geometrical relationship between the substrate and the electron beams is chosen to optimize the role of each beam for its particular function. The operating gas environment is typically a carefully controlled mixture of a non-reactive buffer gas and one or more reactive gases. The gas flow rates, partial pressures, and direction are controlled by valves, regulators, and nozzles connected to the low pressure vessel. The proper vessel pressure is maintained by a vacuum pump through a flow limiting throttle valve. The etching process begins when the electron beams are energized and the proper gas environment is established. The dissociated reactive gas r…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.