Electroluminescent panels and method of manufacture
US4496610A · kind A · utility
11Cited by
1References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 22, 1983 |
| Grant date | Jan 29, 1985 |
| Priority date | — |
| Expiry date | Mar 22, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05B33/145
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method in which a phosphor film of manganese doped zinc chalcogenide is produced by chemical vapor deposition from alkyl zinc vapor and the gaseous hydride of the chalcogen. The manganese dopant is introduced uniformly during deposition by decomposition of tricarbonyl alkylcyclopentadienyl manganese: ##STR1## where here R denotes the alkyl radical. Preferably dimethyl zinc and tricarbonyl methylcyclopentadienyl manganese are used. The phosphor produced may be one of the following manganese doped compounds: zinc sulphide, zinc selenide, zinc sulphur selenide, zinc oxy-sulphide, zinc oxy-selenide or zinc cadmium sulphide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.