Method of fabricating light-controlled thyristor utilizing selective etching and ion-implantation

US4497109A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Peter Huber · Neubiberg, DE
• Jens-Peer Stengl · Hersbruck, DE
• Jeno Tihanyi · Tauberbischofsheim, DE

Key dates

• Filing date: Mar 12, 1984
• Grant date: Feb 5, 1985
• Expiry date: Mar 12, 2004

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F30/263

Abstract

Light-controlled thyristor, including a semiconductor body having a surface, a first zone being of a given conduction type and having a given depth and being adjacent to the surface of the body, a second zone of the given conduction type having a region intended for exposure, a third zone of a conduction type opposite to the given type being disposed under the first and second zones and having a part thereof emerging to the surface of the body between the first and second zones and having a depression formed therein containing the region intended for exposure, electrodes contacting the first and second zones, said second zone having a first and a second subzone, the first subzone having the given depth and being disposed between the part of the third zone emerging to the surface of the body and the depression, the first subzone being in contact with one of the electrodes, the second subzone being the region intended for exposure in the depression and being formed by implanted ions, the second subzone being disposed parallel to the surface of the body and being electrically connected to the first subzone.